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STC12IE90HV
Emitter Switched Bipolar Transistor ESBT 900 V - 12 A - 0.083
General features
VCS(ON) 1V
IC 12A
RCS(ON)
High voltage / high current Cascode configuration Low equivalent on resistance Very fast-switch up to 150 kHz Squared RBSOA up to 900V Very low Ciss driven by RG = 47 Very low turn-off cross over time

Applications
Aux Smps For Three Phase Mains
Description
The STC12IE90HV is manufactured in Monolithic ESBT Technology, aimed to provide best performances in high frequency / high voltage applications. It is designed for use in Gate Driven based topologies.
Order codes
Part Number STC12IE90HV Marking C12IE90HV Package TO247-4L HV Packaging Tube
January 2007
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
W
0.083
Internal schematic diagrams
Rev 1
(R)
Preliminary Data
1 TO247-4L HV
23
4
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www.st.com 11
STC12IE90HV
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 2.2 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
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STC12IE90HV
Electrical ratings
1
Electrical ratings
Table 1.
Symbol VCS(SS) VBS(OS) VSB(OS) VGS IC ICM IB IBM Ptot Tstg TJ
Absolute maximum rating
Parameter Collector-source voltage (V BS = VGS = 0 V) Base-source voltage (IC = 0, V GS = 0 V) Source-base voltage (IC = 0, V GS = 0 V) Gate-source voltage Collector current Collector peak current (tP < 5ms) Base current Base peak current (tP < 5ms) Total dissipation at T c = 25C Storage temperature Max. operating junction temperature Value 900 30 17 Unit V V V V A A A A W C C
17
12 36 6 10 208 -40 to 150 150
Table 2.
Symbol Rthj-case
Thermal data
Parameter Thermal resistance junction-case __max Value 0.6 Unit C/W
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Electrical characteristics
STC12IE90HV
2
Electrical characteristics
(Tcase = 25C unless otherwise specified) Table 3.
Symbol ICS(SS) IBS(OS) ISB(OS)
IGS(OS)
Electrical characteristics
Parameter Collector-source current (VBS = V GS = 0) Base-source current (IC = 0, VGS = 0) Source-base current (IC = 0, VGS = 0) Gate-source leakage Collector-source ON voltage DC current gain Test Conditions VCE = 900V VBS(OS) = 30V VSB(OS) = 17V VGS = 17V VGS = 10V _IC = 12A IB = 2.4A VGS = 10V_ IC = 6A IB = 0.6A VGS = 10V_ IC = 12A VCS = 1V VGS = 10V_ IC = 6A_ VCS = 1V VGS = 10V_ IC = 12A IB = 2.4A VGS = 10V_ IC = 6A_ IB = 0.6A VBS = VGS ______IB = 250A VCS =25V VGS=0V VCS=25V VCB=0V VGS =10V VClamp =720V IC =6A VGS =10V VClamp =720V IC =6A RG =47 IC = 12A VGS=10V IC =4A RG =47 tp =4s IB =1.2A RG =47 tp =4s IB =0.6A hFE =5 900 f =1MHz 2 1 0.6 5 15 1.5 1.2 3 520 4 V V V pF Min. Typ. Max. Unit 100 10 100 100 A A A nA V V
VCS(ON) hFE VBS(ON) VGS(th) Ciss QGS(tot) ts tf
Base Source ON voltage Gate threshold voltage Input capacitance
Gate-source Charge INDUCTIVE LOAD Storage time Fall time INDUCTIVE LOAD Storage time Fall time Maximum collectorsource voltage switched without snubber
21.3
nC
610 10
ns ns
ts tf VCSW
360 10
ns ns
V
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STC12IE90HV Table 3.
Symbol
Electrical characteristics Electrical characteristics
Parameter Collector-source dynamic voltage (500ns) Test Conditions VCC =VClamp =400V IC = 6A VGS =10V IB = 1.2A RG =47 tpeak =500ns IBpeak = 6A (IC ) Min. Typ. Max. Unit
VCS(dyn)
3.37
V
VCS(dyn)
Collector-source dynamic voltage (1s)
VCC =VClamp =400V IC = 6A VGS =10V IB = 1.2A RG =47 tpeak =500ns IBpeak = 6A (IC )
1.75
V
2.1
Electrical characteristics (curves)
Figure 1. DC current gain Figure 2. Collector-source On voltage
Figure 3.
Collector-source On voltage
Figure 4.
Base-source On voltage
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Electrical characteristics Figure 5. Reverse biased SOA Figure 6.
STC12IE90HV Dynamic collector-emitter voltage
Figure 7.
Inductive load switching time Figure 8.
Inductive load switching time
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STC12IE90HV
Electrical characteristics
2.2
Test circuits
Figure 9. Static VCS(ON) test circuits
Figure 10. Inductive load switching and RBSOA test circuit
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Package mechanical data
STC12IE90HV
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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STC12IE90HV
Package mechanical data
TO247-4L HV MECHANICAL DATA
DIM. A A1 A2 b b2 c D D1 E e e1 L L1 L2 L3 oP S
MIN. 4.85 2.20 0.95 2.50 0.40 23.85 15.45 2.54 5.08 10.20 2.20
mm. TYP 2.50 1.27 1.10
MAX. 5.15 2.60 1.30 2.90 0.80 24.15 15.75
24 21.50 15.60
2.50 18.50 3 5.50
10.80 2.80
3.55
3.65
7734874
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Revision history
STC12IE90HV
4
Table 4.
Date
Revision history
Revision history
Revision 1 Initial release. Changes
16-Jan-2007
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STC12IE90HV
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